제조업체 | 부품명 | 데이터시트 | 상세설명 |
Samsung semiconductor
|
KA2225 |
125Kb/3P |
DUAL PREAMPLIFIER FOR 3V USING |
KMM5324004BSW |
401Kb/19P |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
KMM53216000BK |
364Kb/18P |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
KMM53232000BK |
376Kb/18P |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
KMM5322104CKU |
274Kb/15P |
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V |
KMM5322204C2W |
287Kb/17P |
2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V |
KMM53216004CK |
445Kb/21P |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
KMM53232004CK |
459Kb/21P |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
S3C72P9 |
1Mb/225P |
SINGLE-CHIP MICROCONTROLLER HAS BEEN DESIGNED FOR HIGH PERFORMANCE USING |
KMM5322200C2W |
280Kb/17P |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V |
KMM5324000BSW |
357Kb/18P |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
KMM5324004CSW |
435Kb/21P |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
KMM5328004CSW |
440Kb/21P |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
KMM53216000CK |
397Kb/20P |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
KMM5328004BSW |
406Kb/19P |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
KMM53216004BK |
409Kb/19P |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
KMM53232000CK |
412Kb/20P |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
KMM53232004BK |
420Kb/19P |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
KMM53616000CK |
410Kb/20P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
KMM53616004BK |
415Kb/19P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |