| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Qorvo, Inc
|
SGA8343Z |
790Kb/12P |
Heterostructure Bipolar Transistor |
| QPD1010 |
2Mb/25P |
10W, 50V, DC ??4 GHz, GaN RF Transistor
October 2021 |
| QPD1009 |
1Mb/28P |
15W, 50V, DC ??4 GHz, GaN RF Transistor
2019 |
| QPD1013 |
2Mb/25P |
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
2017 |
| QPD1015 |
1Mb/27P |
65W, 50V, DC ??3.7 GHz, GaN RF Transistor
2016 |
| QPD1022 |
2Mb/22P |
10W, 32V, DC ??12 GHz, GaN RF Transistor
February 2022 |
| QPD1008L |
1Mb/20P |
125W, 50V, DC ??3.2 GHz, GaN RF Transistor
October 2021 |
| QPD1015L |
1Mb/27P |
65W, 50V, DC ??3.7 GHz, GaN RF Transistor
2016 |
| T2G6001528-Q3 |
1Mb/17P |
18W, 28V, DC ??6 GHz, GaN RF Power Transistor |
| TGF2929-HM |
1Mb/19P |
100W, 28V, DC ??3.5 GHz, GaN RF Power Transistor |
| T2G6000528-Q3 |
985Kb/13P |
10W, 28V DC ??6 GHz, GaN RF Power Transistor |
| TGF2929-FL |
1Mb/20P |
100W, 28V, DC??.5 GHz, GaN RF Power Transistor |
| T2G6003028-FS |
2Mb/21P |
30W, 28V DC ??6 GHz, GaN RF Power Transistor |
| T2G4005528-FS |
1Mb/13P |
55W, 28V DC ??3.5 GHz, GaN RF Power Transistor |
| QPD1016L |
1Mb/24P |
DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
September 2020 |
| T2G6001528-Q3 |
2Mb/16P |
18 W, 28 V, DC – 6.0 GHz, GaN Power Transistor
December 2021 |
| TGF2977-SM |
2Mb/28P |
DC ??12 GHz, 32 V, 5 W GaN RF Transistor |
| TGF2934 |
3Mb/24P |
DC ??25 GHz, 28 V, 14 W GaN RF Transistor |
| T2G6003028-FL |
2Mb/21P |
30 W, 28V DC – 6 GHz, GaN RF Power Transistor
May 2021 |
| TGF2933 |
4Mb/24P |
DC ??25 GHz, 28 V, 7 W GaN RF Transistor |
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