제조업체 | 부품명 | 데이터시트 | 상세설명 |
Cree, Inc
|
GTRA214602FC |
321Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
GTRA360502M |
250Kb/5P |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
GTRA260502M |
205Kb/5P |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
PTFB192503FL |
531Kb/14P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 1930 ??1990 MHz |
PTFB211503FL |
578Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz |
PTFB212503FL |
553Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz |
PTFB182503FL |
497Kb/11P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 1805 ??1880 MHz |
PTRA094808NF |
599Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET480 W, 48 V, 859 ??960 MHz |
PTVA101K02EV |
359Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET1000 W, 50 V, 1030 / 1090 MHz |
PTVA030121EA |
423Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ??450 MHz |
PTVA035002EV |
462Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz |
PTFB091507FH |
618Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz |
PTFB193404F |
610Kb/14P |
Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 ??1990 MHz |
PXFE181507FC |
550Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz |
PTVA120252MT |
530Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 ??1400 MHz |
PTVA127002EV |
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 ??1400 MHz |
PXAC192908FV |
525Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz |
PTVA092407NF |
595Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz |
PXFC192207FH |
662Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 - 1990 MHz |
PTAC210802FC |
719Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 ??2170 MHz |