제조업체 | 부품명 | 데이터시트 | 상세설명 |
Toshiba Semiconductor
|
SSM5G09TU |
313Kb/10P |
Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode |
SSM5H01TU |
213Kb/10P |
Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode |
SSM5H16TU |
200Kb/7P |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode |
RN4988 |
217Kb/6P |
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) |
RN4989 |
216Kb/6P |
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) |
RN4606 |
250Kb/5P |
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
RN4604 |
251Kb/5P |
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
SSM5H14F |
319Kb/7P |
Silicon N Channel MOS Type (U-MOS??/Silicon Epitaxial Schottky Barrier Diode |
SSM5H11TU |
228Kb/8P |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode |
SF3GZ47 |
292Kb/5P |
TOSHIBA THYRISTOR SILICON DIFFUSED TYPE |
2SC1617 |
153Kb/2P |
SILICON NP TRIPLE DIFFUSED TYPE |
MT6L61AT |
83Kb/3P |
SILICON NPN EPITAXIAL PLANAR TYPE |
2SK2237 |
559Kb/6P |
SILICON N CHANNEL MOS TYPE |
2SC3257 |
140Kb/3P |
SILICON NPN TRIPLE DIFFUSED TYPE |
2SC3309 |
133Kb/3P |
SILICON NPN TRIPLE DIFFUSED TYPE |
2SC3310 |
44Kb/1P |
SILICON NPN TRIPLE DIFFUSED TYPE |
2SD688 |
78Kb/1P |
SILICON NPN EPITAXIAL (PCT PROCESS) |
2SC2509 |
109Kb/2P |
SILICON NPN EPITAXIAL PLANAR TYPE |
2SC5976 |
175Kb/5P |
Transistor Silicon NPN Epitaxial Type |
TPD2004F |
379Kb/10P |
SILICON MONOLITHIC POWER MOS IC |