전자부품 데이터시트 검색엔진 |
|
|
SJPX-H6 데이터시트, PDF |
검색된 단어 : 'SJPX-H6' - Total: 15 (1/1) Pages |
제조업체 | 부품명 | 데이터시트 | 상세설명 |
Sanken electric |
SJPX-H6VR |
232Kb/5P |
SJPX-H6 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature. |
SJPL-H6VL |
144Kb/4P |
The present specifications shall apply to an SJPL-H6. | |
STMicroelectronics |
STS5P3LLH6 |
538Kb/15P |
P-channel 30 V, 0.048 ??typ., 5 A STripFET??H6 DeepGATE??Power MOSFET in an SO-8 package December 2014 Rev 2 |
STD40P3LLH6 |
734Kb/16P |
P-channel -30 V, 12 m廓 typ., -40 A STripFET??H6 Power MOSFET in a DPAK package March 2016 Rev 4 |
|
STL62P3LLH6 |
1Mb/16P |
P-channel -30 V, 9 m廓 typ., -62 A STripFET??H6 Power MOSFET in a PowerFLAT 5x6 package October 2016 Rev 6 |
|
STD52P3LLH6 |
778Kb/16P |
P-channel 30 V, 0.01 廓 typ., 52 A, STripFET??H6 Power MOSFET in a DPAK package September 2014 Rev 2 |
|
STL9P3LLH6 |
628Kb/14P |
P-channel -30 V, 12 m廓 typ., -9 A STripFET??H6 Power MOSFET in a PowerFLAT??3.3x3.3 package March 2016 Rev 2 |
|
STL45P3LLH6 |
841Kb/15P |
P-channel -30 V, 11 m廓 typ., -45 A STripFET??H6 Power MOSFET in a PowerFLAT??5x6 package April 2016 Rev 1 |
|
STL19N3LLH6AG |
659Kb/14P |
Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFETTM H6 Power MOSFET in a PowerFLAT 5x6 package April 2018 Rev 1 |
|
STD95P3LLH6AG |
731Kb/16P |
Automotive-grade P-channel -30 V, 5 mΩ typ., -80 A STripFET™ H6 Power MOSFET in a DPAK package July 2016 |
|
STD37P3H6AG |
313Kb/16P |
Automotive-grade P-channel -30 V, 11 m廓 typ., -49 A STripFET??H6 Power MOSFET in a DPAK package August 2015 Rev 1 |
|
STS5DP3LLH6 |
711Kb/14P |
Dual P-channel -30 V, 48 mΩ typ., -5 A, STripFET™ H6 Power MOSFET in an SO-8 package January 2018 |
|
Sanken electric |
SJPB-L6VL |
71Kb/4P |
SJPB-H6 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. |
SJPX-H3VR |
244Kb/5P |
SJPX-H3 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature. | |
SJPX-F2VR |
242Kb/5P |
SJPX-F2 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature. |
1 |
1 |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |