제조업체 | 부품명 | 데이터시트 | 상세설명 |
Leshan Radio Company
|
LBSS4240P3T1G |
882Kb/5P |
40V,2A Low VCE(sat) NPN Silicon |
LMDL301T1G |
135Kb/3P |
Silicon Hot?밅arrier Diodes Schottky Barrier Diode |
LMBT6520LT1G |
246Kb/6P |
High Voltage Transistor PNP Silicon RoHS requirements. |
MMBD301LT1 |
54Kb/2P |
Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
MA700A |
52Kb/4P |
Schottky barrier diode Glass silicon switching diodes |
LMBT6517LT1G |
247Kb/6P |
High Voltage Transistors NPN Silicon RoHS requirements. |
LMBD301LT1 |
87Kb/3P |
Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
LMBD301LT1G |
110Kb/3P |
Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
LMBD301LT1G |
112Kb/3P |
Silicon Hot?밅arrier Diodes Schottky Barrier Diodes |
LMBT918LT1G |
75Kb/3P |
VHF / UFH Transistor NPN Silicon RoHS requirements. |
LMBT2222LT1G |
243Kb/6P |
General Purpose Transistors NPN Silicon RoHS requirements. |
L2SK3019LT1G |
665Kb/4P |
Silicon N-Channel MOSFET Fast switching speed |
MMBT3904WT1 |
455Kb/9P |
General Purpose Transistors(NPN and PNP Silicon) |
LBSS5240P3T1G |
1Mb/5P |
-40V,-2A Low VCE(sat) PNP Silicon |
LMBT2222ADW1T1G |
447Kb/8P |
Dual General Purpose Transistors NPN Silicon ROHS requirements. |
L8050HPLT1G |
81Kb/3P |
General Purpose Transistors NPN Silicon Epitaxial planar type. |
L8550HPLT1G |
85Kb/3P |
General Purpose Transistors PNP Silicon Epitaxial planar type. |
L2SC3356RWT1G |
653Kb/4P |
The L2SC3356RWT1G is an NPN silicon epitaxial transistor |
L8050PLT1G |
71Kb/4P |
General Purpose Transistors NPN Silicon Epitaxial planar type. |
LH8050PLT1G |
565Kb/4P |
General Purpose Transistors NPN Silicon Epitaxial planar type. |