제조업체 | 부품명 | 데이터시트 | 상세설명 |
NXP Semiconductors
|
MML09212H |
709Kb/27P |
Low Noise Amplifier Rev. 3, 01/2018 |
MML09231H |
307Kb/12P |
Low Noise Amplifier Rev. 1, 9/2014 |
MML09211H |
566Kb/20P |
Low Noise Amplifier Rev. 1, 9/2014 |
MML20211H |
580Kb/20P |
Low Noise Amplifier Rev. 1, 9/2014 |
NZ2520S |
137Kb/2P |
Low Phase Noise Type |
K81A |
145Kb/6P |
NOISE DIODE FOR USE AS A STANDARD NOISE SOURCE FOR METRICWAVES 1.1.1956 A |
K81A |
121Kb/4P |
NOISE DIODE FOR USE AS A STANDARD NOISE SOURCE FOR METRIC WAVES December 1968 |
BGU8051 |
222Kb/16P |
Low noise high linearity amplifier Rev. 7-8 June 2017 |
BGU8062 |
270Kb/18P |
low-noise high-linearity amplifier Rev. 2-24 January 2017 |
BGU8061 |
491Kb/17P |
low-noise high-linearity amplifier Rev. 2-27 January 2017 |
BGU8063 |
584Kb/17P |
low-noise high-linearity amplifier Rev. 2-27 January 2017 |
BGU8053 |
225Kb/16P |
Low noise high linearity amplifier Rev. 7-17 July 2017 |
MC13821 |
925Kb/42P |
Low Noise Amplifier with Bypass Switch Rev. 1.5, 09/2009 |
MC13820 |
1Mb/38P |
Low Noise Amplifier with Bypass Switch Rev. 1.1, 09/2005 |
MC13850 |
3Mb/54P |
Low Noise Amplifier with Bypass Switch Rev. 1, 12/2010 |
BGU8L1UK |
198Kb/11P |
SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1-19 May 2015 |
MBC13720 |
1Mb/24P |
SiGe:C Low Noise Amplifier with Bypass Switch Rev. 4, 09/2011 |
MBC13706 |
261Kb/4P |
GSM Low Noise Amplifier with Gain Control Rev 0 |
BGU7003 |
158Kb/17P |
Wideband silicon germanium low-noise amplifier MMIC Rev. 01-2 March 2009 |
NE58633 |
259Kb/27P |
Noise reduction class-D headphone driver amplifier Rev. 02-25 May 2009 |