MEMORY Datasheet(PDF) - HY5S5B6GLF-6 - Hynix Semiconductor

전자부품 데이터시트 검색엔진

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MEMORY 데이터시트, PDF

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검색된 단어 : 'MEMORY' - Total: 19 (1/1) Pages

제조업체	부품명	데이터시트	상세설명
Hynix Semiconductor	HY5S5B6GLF-6	3Mb/52P	256Mbit (16Mx16bit) Mobile SDR Memory
	HY27UF081G2M	476Kb/48P	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
	GM62093A	87Kb/6P	12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY
	HY27US08281A	344Kb/44P	128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
	HY27UA081G1M	729Kb/43P	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
	HY29LV320	323Kb/44P	32 Mbit (2M x 16) Low Voltage Flash Memory
	HY29F400	509Kb/40P	4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
	HY29F400A	591Kb/40P	4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
	HY29F800A	263Kb/40P	8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
	HY29F800	509Kb/40P	8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
	HY29F002T	381Kb/38P	2 Megabit (256K x 8), 5 Volt-only, Flash Memory
	HY29F080	366Kb/38P	8 Megabit (1M x 8), 5 Volt-only, Flash Memory
	HY29LV160	517Kb/48P	16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
	HY29LV400	549Kb/40P	4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
	HY29F040A	282Kb/40P	512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
	HY29LV800	556Kb/40P	8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
	HY29DL162	548Kb/48P	16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
	HY29DS322	289Kb/6P	32 Megabit (4M x 8/2M x16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory
	HY29DS162	546Kb/48P	16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

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MEMORY 란

Memory는 전자 부품 분야에서 데이터나 명령어 등을 저장할 수 있는 디지털 기억 장치를 의미하는 용어입니다.

전자 부품에서 Memory는 전자기적인 방식으로 데이터를 저장하며, RAM, ROM, EEPROM, Flash Memory 등 다양한 종류가 있습니다.

이러한 Memory는 컴퓨터, 스마트폰, 디지털 카메라 등 다양한 전자 제품에서 사용되어 중요한 역할을 합니다.

*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.

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