제조업체 | 부품명 | 데이터시트 | 상세설명 |
Fairchild Semiconductor
|
1N750A |
299Kb/4P |
Absolute Maximum Ratings |
1N5221B |
85Kb/3P |
Absolute Maximum Ratings |
1N5226B |
23Kb/3P |
Absolute Maximum Ratings |
1N458ATR |
33Kb/2P |
Maximum Repetitive Reverse Voltage |
1N4148 |
146Kb/7P |
Maximum Repetitive Reverse Voltage |
1N3070TR |
31Kb/2P |
Maximum Repetitive Reverse Voltage |
1N3595 |
34Kb/2P |
Small Signal Diode Absolute Maximum Ratings |
FYV0203DNMTF |
83Kb/4P |
Absolute Maximum Ratings TA 25C unless otherwise noted |
AN-1029 |
258Kb/13P |
Maximum Power Enhancement Techniques for SO-8 Power MOSFETs |
AN-1026 |
223Kb/12P |
Maximum Power Enhancement Techniques for SuperSOTTM-6 Power MOSFETs |
AN-1028 |
257Kb/12P |
Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs |
AN-1025 |
256Kb/11P |
Maximum Power Enhancement Techniques for SuperSOTTM-3 Power MOSFETs |
FSV240AF |
114Kb/5P |
Low Forward Voltage Drop: 0.5 V Maximum at 2 A |
FSV530AF |
111Kb/5P |
Low Forward Voltage Drop: 0.54 V Maximum at 5 A |
FSV330AF |
112Kb/5P |
Low Forward Voltage Drop: 0.5 V Maximum at 3 A |
PN2222BU |
31Kb/3P |
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25째C unless otherwise noted |
BZX84C5V6 |
1Mb/4P |
These ratings are based on a maximum junction temperature of 150 degrees C. |