제조업체 | 부품명 | 데이터시트 | 상세설명 |
Shanghai Leiditech Elec...
|
1N5391G |
246Kb/2P |
Glass passivated chip junction |
SMBJ188CA |
1Mb/5P |
Glass passivated or planar junction |
NCE65T900D |
1Mb/9P |
N-Channel Super Junction Power MOSFET |
LMPI4N65 |
805Kb/6P |
N-Channel Super Junction Power MOSFET |
LMPI4N70 |
878Kb/6P |
N-Channel Super Junction Power MOSFET |
LM65T1K2I |
804Kb/6P |
N -Channel Super Junction Power MOSFET |
LMPI5N60A |
668Kb/4P |
N-Channel Super Junction Power MOSFET |
LMU60R840A |
664Kb/4P |
N-Channel Super Junction Power MOSFET |
LM70T1K2I |
877Kb/6P |
N-Channel Super Junction Power MOSFET |
LMPC5N65 |
1Mb/9P |
N-Channel Super Junction Power MOSFET |
LMFB21N65 |
1Mb/7P |
N-Channel Super Junction Power MOSFET |
LCE65T1K2F |
1Mb/9P |
LCE N-Channel Super Junction Power MOSFET |
LM8S7ND03 |
912Kb/6P |
LCE N-Channel Super Junction Power MOSFET |
BTA04-600SW |
324Kb/5P |
Storage junction temperature range Tstg -40 - 150 ? |
LCE65T180 |
1Mb/7P |
LCE N-Channel Super Junction Power MOSFET |
LCE65T900F |
1Mb/9P |
LCE N-Channel Super Junction Power MOSFET |
LCE30ND07S |
898Kb/6P |
LCE N-Channel Super Junction Power MOSFET |
SM10S24A |
2Mb/5P |
Junction passivation optimized design passivated anisotropic rectifier technology |