제조업체 | 부품명 | 데이터시트 | 상세설명 |
STMicroelectronics
|
M14C32DD |
16Kb/2P |
M14C32 Die Description |
M14C16DD |
14Kb/2P |
M14C16 Die Description |
M14C04DD |
12Kb/2P |
M14C04 Die Description |
TN0193 |
117Kb/6P |
LRIS64K bumped die description |
M28R400CT-KGD |
461Kb/11P |
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
M69KB096AB |
486Kb/73P |
64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM |
STG25H120F2D7 |
252Kb/10P |
1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing May 2015 Rev 1 |
STG60H65FBD7 |
428Kb/10P |
Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing Rev 3 - July 2023 |
STG35M120F3D7 |
184Kb/9P |
1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing DS12463 - Rev 1 - February 2018 |
STG15M120F3D7 |
263Kb/10P |
Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing Rev 3 - August 2022 |
STG15M120F3D8 |
224Kb/8P |
1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing Rev 1 - January 2022 |
STG50M120F3D7 |
243Kb/10P |
Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing Rev 2 - August 2022 |
STG200M65F2D8AG |
292Kb/11P |
Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing May 2021 Rev 4 |
M65KA512AB |
502Kb/55P |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM |
STG200G65FD8AG |
505Kb/11P |
Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing Rev 1 - July 2023 |