제조업체 | 부품명 | 데이터시트 | 상세설명 |
Infineon Technologies A...
|
BGA751L7 |
689Kb/22P |
Low Power Single-Band UMTS LNA (800, 900 MHz) V3.2, May 2009 |
BGA736L16 |
1Mb/45P |
Tri-Band HSDPA LNA (2100, 1900/2100, 800/900 MHz) V2.1, July 2008 |
BGA748L16 |
2Mb/31P |
High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.2, 2010-06-18 |
BGA748N16 |
2Mb/31P |
High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.0, 2010-11-08 |
PTFA081501E |
258Kb/10P |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz Rev. 03, 2007-03-09 |
PTFC270051M |
293Kb/14P |
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz Rev. 01.1, 2016-07-26 |
PTFC270101M |
410Kb/22P |
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26 |
BGA735N16 |
2Mb/33P |
High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz) Revision 3.8, 2010-12-23 |