제조업체 | 부품명 | 데이터시트 | 상세설명 |
ON Semiconductor
|
NB3N501 |
139Kb/6P |
3.3V / 5.0V 13 MHz to 160 MHz PLL Clock Multiplier May, 2012 ??Rev. 1 |
NTBG160N120SC1 |
329Kb/8P |
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L April, 2022 - Rev. 2 |
NVBG160N120SC1 |
327Kb/8P |
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L May, 2022 - Rev. 2 |
NB3N501 |
110Kb/6P |
3.3V / 5.0V 13 MHz to 160 MHz PLL Clock Multiplier November, 2013 ??Rev. 2 |
NTD5C434N |
233Kb/7P |
MOSFET ??Power, Single, N-Channel 40 V, 2.1 m, 160 A May, 2019 ??Rev. 0 |
NVMFS6H801NL |
184Kb/7P |
MOSFET - Power, Single N-Channel 80 V, 2.7 m, 160 A March, 2020 ??Rev. 0 |
NTH4L160N120SC1 |
356Kb/8P |
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L May, 2022 - Rev. 4 |
NTC160N120SC1 |
171Kb/8P |
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, Bare Die April, 2022 - Rev. 1 |
MJH6284 |
82Kb/5P |
DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS July, 2006 ??Rev. 5 |
NVH4L160N120SC1 |
358Kb/8P |
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L May, 2022 - Rev. 4 |
NTMFS6H801NL |
136Kb/6P |
MOSFET - Power, Single N-Channel 80 V, 2.7 m, 160 A March, 2020 ??Rev. 0 |
NTHL160N120SC1 |
306Kb/7P |
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L May, 2022 - Rev. 3 |
NVHL160N120SC1 |
240Kb/7P |
MOSFET - SiC Power, Single N-Channel 1200 V, 160 m, 17 A March, 2020 ??Rev. 0 |
NTHL160N120SC1 |
236Kb/7P |
MOSFET - SiC Power, Single N-Channel 1200 V, 160 m, 17 A March, 2020 ??Rev. 0 |
FGY160T65SPD-F085 |
3Mb/10P |
IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A November, 2019 - Rev. 3 |
NTHL160N120SC1 |
308Kb/7P |
Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L January, 2023 - Rev. 4 |
NTBG160N120SC1 |
245Kb/8P |
MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 160 m, 19.5 A February, 2020 ??Rev. 0 |
NVH4L160N120SC1 |
277Kb/8P |
MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A April, 2020 ??Rev. 2 |
NTH4L160N120SC1 |
277Kb/8P |
MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A April, 2020 ??Rev. 2 |