0.24 Datasheet(PDF) - DFE201612E

제조업체	부품명	데이터시트	상세설명
TOKO, Inc	DFE201612E	226Kb/1P	0.24~4.7?쵩
Fairchild Semiconductor	FDP19N40	232Kb/8P	N-Channel MOSFET 400V, 19A, 0.24廓
Fairchild Semiconductor	FDP19N40	264Kb/9P	N-Channel MOSFET 400V, 19A, 0.24廓
Ningbo Foryard Optoelec...	FYT-2431AX-XX	405Kb/5P	0.24 Inch (6.00mm) digit height Single Digit Display
Kemet Corporation	C2220C244KDRLCAUTO	60Kb/1P	KONNEKT Auto X7R, Ceramic, 0.24 uF, 10%, 1000 VDC, X7R
Intersil Corporation	FRM240D	47Kb/6P	16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998
Motorola, Inc	MTW16N40E	217Kb/8P	TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
Motorola, Inc	MTW20N50E	193Kb/8P	TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM
Energizer	CR2450	61Kb/1P	3.0 Volts 6.9 grams (0.24 oz.) 2.4 cubic centimeters (0.14 cubic inch)
Hubbell Incorporated.	BURNDY_YF2206UI	259Kb/2P	Cu Alloy Bare Ferrule, Smooth Funnel Entry, 22 AWG, 0.24" L, Seamless bbl, Tin Plated, For Use On Cu Cond.
Vishay Siliconix	VT60L45PW	96Kb/4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.24 V at IF = 5 A Revision: 08-Jan-14
Hubbell Incorporated.	BURNDY_YF2006UI	259Kb/2P	Cu Alloy Bare Ferrule, Smooth Funnel Entry, 20 AWG, 0.24" L, Seamless bbl, Tin Plated, For Use On Cu Cond.
Hubbell Incorporated.	BURNDY_YF1806UI	259Kb/2P	Cu Alloy Bare Ferrule, Smooth Funnel Entry, 18 AWG, 0.24" L, Seamless bbl, Tin Plated, For Use On Cu Cond.

0.24 데이터시트, PDF