| 제조업체 | 부품명 | 데이터시트 | 부품 상세설명 |
STMicroelectronics
|
M36P0R9070E0
|
 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
Numonyx B.V
|
M36P0R9060E0
|
|
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package |
| M36P0R9070E0
|
|
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package |
| M36P0R9060N0
|
|
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package |
STMicroelectronics
|
M36L0R8060T1
|
|
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36P0R9060E0
|
|
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package |
Cypress Semiconductor
|
CY7C1510KV18_11
|
|
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses |
STMicroelectronics
|
M36P0R9070E0_06
|
|
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package |
| M36L0R8060T0
|
|
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7060T1
|
|
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package |
Siemens Semiconductor G...
|
SFH507
|
|
IR-Empfanger fur Fernbedienungen fur kurze Burst IR-Receiver for Remote Control Systems for Short Burst |
Numonyx B.V
|
M36L0R7060T1
|
|
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package |
Samsung semiconductor
|
K5L5628JTM
|
|
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM |
STMicroelectronics
|
M36LLR8760T1
|
|
256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
Numonyx B.V
|
M36P0R8070E0
|
|
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package |
GSI Technology
|
GS816218BB-V
|
|
1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs |
| GS81302Q37AGD-400I
|
|
144Mb SigmaQuad-II+TM Burst of 2 SRAM |
| GS81302D19AGD-333I
|
|
144Mb SigmaQuad-II+TM Burst of 4 SRAM |
Cypress Semiconductor
|
CY7C1312CV18_11
|
|
18-Mbit QDR® II SRAM 2-Word Burst Architecture |
GSI Technology
|
GS8160E18T
|
|
1M x 18, 512K x 36 18Mb Sync Burst SRAMs |
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