| 제조업체 | 부품명 | 데이터시트 | 부품 상세설명 |
Siemens Semiconductor G...
|
SFH507
|
40Kb / 6P |
IR-Empfanger fur Fernbedienungen fur kurze Burst IR-Receiver for Remote Control Systems for Short Burst |
Numonyx B.V
|
M36P0R9060N0
|
454Kb / 23P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package |
| M36L0R7060T1
|
445Kb / 22P |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package |
STMicroelectronics
|
M36P0R9060E0
|
203Kb / 23P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package |
Samsung semiconductor
|
K5L5628JTM
|
1Mb / 98P |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM |
STMicroelectronics
|
M36LLR8760T1
|
427Kb / 19P |
256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
Numonyx B.V
|
M36P0R8070E0
|
638Kb / 22P |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package |
STMicroelectronics
|
M36P0R9070E0
|
200Kb / 26P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
Numonyx B.V
|
M36P0R9060E0
|
459Kb / 23P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package |
| M36P0R9070E0
|
468Kb / 23P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package |
STMicroelectronics
|
M36L0R8060T1
|
390Kb / 18P |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
Cypress Semiconductor
|
CY7C1510KV18_11
|
920Kb / 33P |
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses |
STMicroelectronics
|
M36P0R9070E0_06
|
214Kb / 23P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package |
| M36L0R8060T0
|
358Kb / 18P |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7060T1
|
221Kb / 22P |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package |
Integrated Device Techn...
|
IDT71V3548S
|
490Kb / 26P |
256K x 18 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs |
GSI Technology
|
GS81302QT19E-300I
|
487Kb / 28P |
144Mb SigmaQuad-II+TM Burst of 2 SRAM |
| GS82582QT20GE-450I
|
325Kb / 26P |
288Mb SigmaQuad-II+TM Burst of 2 SRAM |
Cypress Semiconductor
|
CY7C1410V18
|
407Kb / 23P |
36-Mbit QDR-II™ SRAM 2-Word Burst Architecture |
Integrated Device Techn...
|
IDT71V547
|
162Kb / 19P |
128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs |
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